SI3981DV-T1-GE3【PDF 2/10 页】MOSFET P-CH DUAL 20V 6-TSOP

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Si3981DV

Vishay Siliconix

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

- 0.40

- 1.1

V

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 8 V

V DS = - 20 V, V GS = 0 V

V DS = - 20 V, V GS = 0 V, T J = 85 °C

V DS = ? - 5 V, V GS = - 4.5 V

V GS = - 4.5 V, I D = - 1.9 A

-5

0.146

± 100

-1

- 10

0.185

nA

μA

A

Drain-Source On-State Resistance

a

R DS(on)

V GS = - 2.5 V, I D = - 1.6 A

0.210

0.260

?

V GS = - 1.8 V, I D = - 0.7 A

0.306

0.385

Forward Transconductance a

g fs

V DS = - 5 V, I D = - 1.9 A

4

S

Diode Forward Voltage

a

V SD

I S = - 1 A, V GS = 0 V

- 0.84

- 1.1

V

Dynamic b

Total Gate Charge

Q g

3.2

5

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Q gs

Q gd

R g

t d(on)

t r

V DS = - 10 V, V GS = - 4.5 V, I D = - 1.9 A

f = 1 MHz

V DD = - 10 V, R L = 10 ?

0.42

0.84

6

30

50

45

85

nC

?

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

t d(off)

t f

t rr

I D ? - 1 A, V GEN = - 4.5 V, R g = 6 ?

I F = - 1 A, dI/dt = 100 A/μs

45

21

20

85

50

40

ns

Notes:

a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

8

8

7

V GS = 5 V thru 3 V

7

T C = - 55 °C

25 °C

6

5

4

3

2

1

0

2.5 V

2V

1.5 V

6

5

4

3

2

1

0

125 °C

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V DS - Drain-to-Source Voltage (V)

Output Characteristics

V GS - Gate-to-Source Voltage (V)

Transfer Characteristics

www.vishay.com

2

For technical questions, contact: pmostechsupport@vishay.com

Document Number: 72502

S13-0631-Rev. E, 25-Mar-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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